ace 9 4 3 5 b p - channel enhancement mode field effect transistor ver 1. 2 1 d escription this p - channel enhancement mode power fets are produced with high cell density, dmos trench technology, which is especially used to minimize on - state resistance. this device is particularly suited for low voltage application such as portable equipment, power management and other battery power ed circuits, and low in - line power loss are needed in a very small outline surface mount package. features ? v ds (v) = - 3 2 0v , i d = - 5.2 4 .1a ? r ds (on ) = 51 m @ v gs = - 10 v ? r ds(on) = 68 m @ v gs = - 4 .5 v ? high density cell desi gn for low r ds(on) absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds s - 30 v gate - source voltage v gs s 20 v drain current ( note 1) continuous t a =25 o c i d - 5.2 a pulsed (note 2) - 50 total power dissipation ( note 1) p d 1. 5 w operating and storage temperature range t j , t stg - 55 to 150 o c packaging type s op - 8 8 7 6 5 1 2 3 4
ace 9 4 3 5 b p - channel enhancement mode field effect transistor ver 1. 2 2 ordering i nformation ace 9 4 3 5 b x x + h electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit o f f c h a r a c t e r i s t i c s drain - source breakdown voltage v (br)dss v gs =0v, i d = - 250ua - 3 0 - 3 6 v zero gate voltage drain current i dss v ds = - 2 4 v, v gs =0v 0 . 0 2 - 1 ua gate leakage current i gss v gs = 2 0 v, v ds =0v 1 . 5 10 0 na o n c h a r a c t e r i s t i c s d r a i n - s o u r c e o n - s t a t e r e s i s t a n c e r ds(on) v gs = - 1 0 v, i d = - 4 . 6 a 5 1 6 0 m v gs = - 4 . 5v, i d = - 2 a 6 8 8 2 gate threshold voltage v gs(th) v ds =v gs , i d = - 250ua - 1 - 1 . 4 6 - 3 v forward transconductance g fs v ds = - 5v, i d = - 6 a 1 2 s switching turn - on delay time t d(on) v d s = - 1 5 v,r l = 2 .5 r gen = 3 , v g s = - 1 0 v 8 . 6 ns turn - off delay time t d(off) 2 8 . 2 dynamic c h a r a c t e r i s t i c s input capacitance c iss v ds = - 1 5 v, v gs =0v f=1 mhz 5 5 0 pf output capacitance c oss 6 0 reverse transfer capacitance c rss 5 0 d r a i n - s o u r c e d i o d e c h a r a c t e r i s t i c s a n d m a x i m u m r a t i n g s d i o d e f o r w a r d v o l t a g e v s d v g s = 0 v , i s = - 1 a - 0 . 8 1 v note: 1. the value of p d is measured with the device mounted on 1in 2 fr - 4 board wi th 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. the current rating is b ased on the dc thermal resistance rating. 2. repetitive rating, pulse width limited by junction temperature. f m : so p - 8 pb - free halogen - free
ace 9 4 3 5 b p - channel enhancement mode field effect transistor ver 1. 2 3 typical performance characteristics
ace 9 4 3 5 b p - channel enhancement mode field effect transistor ver 1. 2 4 packing information so p - 8 u n i t: mm
ace 9 4 3 5 b p - channel enhancement mode field effect transistor ver 1. 2 5 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approva l of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perf orm when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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